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PolarHT Power MOSFET N-CH 250V 100A TO-3P
Технические характеристики:
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 250 V |
Vgs - Gate-Source Breakdown Voltage: | ±20 V |
Id - Continuous Drain Current: | 100 A |
Rds On - Drain-Source Resistance: | 27 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 5 V |
Qg - Gate Charge:; | 185 nC |
Pd - Power Dissipation: | 600 W |
Channel Mode: | Enhancement |
Fall Time: | 28 ns |
Forward Transconductance - Min: | 40 S |
Rise Time: | 26 ns |
Typical Turn-Off Delay Time: | 100 ns |
Case: | TO-3P |
Operating Temperature: | - 55 ~ 150 °C |